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| Datasheet File OCR Text: |
| N-Channel JFET General Purpose Amplifier CORPORATION J201 - J204 / SST201 - SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. * High Input Impedance * Low IGSS PIN CONFIGURATION SOT-23 G TO-92 D S ORDERING INFORMATION G DS 5010 PRODUCT MARKING (SOT-23) SST201 A01 SST202 A02 SST203 A03 SST204 A04 Part Package Temperature Range J201-204 Plastic TO-92 -55oC to +135oC SST201-204 Plastic SOT-23 -55oC to +135oC For Sorted Chips in Carriers see 2N4338 series. ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL IGSS VGS(off) BVGSS IDSS IG gfs gos Ciss Crss en PARAMETER Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 2) Gate Current (Note 1) Common-Source Forward 500 Transconductance (Note 2) Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage 1 4 1 5 -0.3 -40 0.2 -10 1,000 3.5 4 1 5 1.0 201 202 203 204 MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX -100 -1.5 -0.8 -40 0.9 -10 1,500 10 4 1 5 4.5 -100 -4.0 -2.0 -40 4.0 -10 20 -100 -10.0 -0.3 -25 0.2 1.2 -10 500 1,500 s 2.5 4 pF 1 10 nV Hz VDS = 20V, VGS = 0 f = 1MHz (Note 3) VDS = 10V, f = 1kHz VGS = 0 (Note 3) f = 1kHz 3.0 mA pA -100 -2.0 V VDS = 0, IG = -1A VDS = 20V, VGS = 0 VDG = 20V, ID = IDSS(min) UNITS pA TEST CONDITIONS VDS = 0, VGS = -20V VDS = 20V, ID = 10nA NOTES: 1. Approximately doubles for every 10oC increase in TA. 2. Pulse test duration = 2ms. 3. For design reference only, not 100% tested. |
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